Технічний опис 2SK4125-1E ON Semiconductor
Description: MOSFET N-CH 600V 17A TO3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V, Power Dissipation (Max): 2.5W (Ta), 170W (Tc), Supplier Device Package: TO-3P-3L, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V.
Інші пропозиції 2SK4125-1E
| Фото | Назва | Виробник | Інформація |
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2SK4125-1E | Виробник : onsemi |
Description: MOSFET N-CH 600V 17A TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Supplier Device Package: TO-3P-3L Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
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