Продукція > PANJIT SEMICONDUCTOR > 3.0SMCJ170CA_R2_00001

3.0SMCJ170CA_R2_00001 PanJit Semiconductor



Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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Технічний опис 3.0SMCJ170CA_R2_00001 PanJit Semiconductor

Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 3kW; 189÷217.5V; 11A; bidirectional; SMC; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 170V, Breakdown voltage: 189...217.5V, Max. forward impulse current: 11A, Semiconductor structure: bidirectional, Case: SMC, Mounting: SMD, Leakage current: 3µA, Manufacturer series: 3.0SMCJ, Features of semiconductor devices: glass passivated, Kind of package: reel; tape.