Технічний опис 30KPA45A-B Littelfuse
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 30kW; 52.8V; 391.5A; unidirectional; ±5%; P600; bulk, Type of diode: TVS, Peak pulse power dissipation: 30kW, Max. off-state voltage: 45V, Breakdown voltage: 52.8V, Max. forward impulse current: 391.5A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 0.25mA, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA45A-B
| Фото | Назва | Виробник | Інформація |
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30KPA45A-B | Виробник : LITTELFUSE |
 Category: Unidirectional THT transil diodesDescription: Diode: TVS; 30kW; 52.8V; 391.5A; unidirectional; ±5%; P600; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 45V Breakdown voltage: 52.8V Max. forward impulse current: 391.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 0.25mA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KPA45A-B | Виробник : Littelfuse Inc. |
Description: TVS DIODE 45VWM 77.4VC P600 Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 391.5A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 50.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No |
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30KPA45A-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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30KPA45A/B | Виробник : Yageo |
ESD Suppressors / TVS Diodes UND Wkg72V 1CH AXI P600 Bkdn88.86V |
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30KPA45A-B | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 52.8V; 391.5A; unidirectional; ±5%; P600; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 45V Breakdown voltage: 52.8V Max. forward impulse current: 391.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 0.25mA Kind of package: bulk Features of semiconductor devices: glass passivated |
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