30KP288CA MDE Semiconductor Inc
Виробник: MDE Semiconductor Inc
Description: TVS DIODE 288VWM 469.9VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 64.5A
Voltage - Reverse Standoff (Typ): 288V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 321.7V
Voltage - Clamping (Max) @ Ipp: 469.9V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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Технічний опис 30KP288CA MDE Semiconductor Inc
Description: TVS DIODE 288VWM 469.9VC P600, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 64.5A, Voltage - Reverse Standoff (Typ): 288V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 321.7V, Voltage - Clamping (Max) @ Ipp: 469.9V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції 30KP288CA
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
30KP288CA | CDIL |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; bulk; 30kW Features of semiconductor devices: glass passivated Case: R6 Mounting: THT Type of diode: TVS Leakage current: 10µA Max. forward impulse current: 64.5A Max. off-state voltage: 288V Breakdown voltage: 321.7V Peak pulse power dissipation: 30kW Semiconductor structure: bidirectional Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| 30KP288CA |
|
Виробник: CDIL
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; bulk; 30kW
Features of semiconductor devices: glass passivated
Case: R6
Mounting: THT
Type of diode: TVS
Leakage current: 10µA
Max. forward impulse current: 64.5A
Max. off-state voltage: 288V
Breakdown voltage: 321.7V
Peak pulse power dissipation: 30kW
Semiconductor structure: bidirectional
Kind of package: bulk
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; bulk; 30kW
Features of semiconductor devices: glass passivated
Case: R6
Mounting: THT
Type of diode: TVS
Leakage current: 10µA
Max. forward impulse current: 64.5A
Max. off-state voltage: 288V
Breakdown voltage: 321.7V
Peak pulse power dissipation: 30kW
Semiconductor structure: bidirectional
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.