30KP39CA MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE BP 39VRWM 67.2VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 450.9A
Voltage - Reverse Standoff (Typ): 39V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 43.6V
Voltage - Clamping (Max) @ Ipp: 67.2V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1354.47 грн |
Відгуки про товар
Написати відгук
Технічний опис 30KP39CA MDE Semiconductor Inc
Description: TVS DIODE BP 39VRWM 67.2VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 450.9A, Voltage - Reverse Standoff (Typ): 39V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 43.6V, Voltage - Clamping (Max) @ Ipp: 67.2V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.
Інші пропозиції 30KP39CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
30KP39CA | Виробник : CDIL |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 43.6V; 450.9A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 39V Breakdown voltage: 43.6V Max. forward impulse current: 450.9A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 4mA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товару немає в наявності |
|
|
|
30KP39CA | Виробник : CDIL |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 43.6V; 450.9A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 39V Breakdown voltage: 43.6V Max. forward impulse current: 450.9A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 4mA Kind of package: bulk Features of semiconductor devices: glass passivated |
товару немає в наявності |