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5SNA 2400E170100 ABB

5SNA 2400E170100.pdf Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Mechanical mounting: screw
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Технічний опис 5SNA 2400E170100 ABB

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Type of module: IGBT, Semiconductor structure: common emitter; common gate; transistor/transistor, Topology: IGBT half-bridge x3, Max. off-state voltage: 1.7kV, Collector current: 2.4kA, Case: HIPAK, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 4.8kA, Mechanical mounting: screw.