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5SNA 1200G330100 ABB

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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Mechanical mounting: screw

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Технічний опис 5SNA 1200G330100 ABB

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Type of semiconductor module: IGBT, Semiconductor structure: common emitter; common gate; transistor/transistor, Topology: IGBT half-bridge x3, Max. off-state voltage: 3.3kV, Collector current: 1.2kA, Case: HIPAK, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 2.4kA, Mechanical mounting: screw.