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5SNE 1000E330300 ABB

5SNE_1000E330300.pdf
Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Case: HIPAK
Semiconductor structure: common emitter; common gate; diode/transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Topology: boost chopper; buck chopper
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Технічний опис 5SNE 1000E330300 ABB

Category: IGBT modules, Description: Module: IGBT; diode/transistor,common gate,common emitter, Case: HIPAK, Semiconductor structure: common emitter; common gate; diode/transistor, Type of semiconductor module: IGBT, Mechanical mounting: screw, Electrical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 1kA, Max. off-state voltage: 3.3kV, Pulsed collector current: 2kA, Topology: boost chopper; buck chopper.