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5SNG 0200Q170300 ABB


pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB89197BD38FE80C7&compId=5SNG_0200Q170300.pdf?ci_sign=b3e4554f909c9a91364d5aaa029822c0e6575404 Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 200A
Case: 62PAK
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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Технічний опис 5SNG 0200Q170300 ABB

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.7kV, Collector current: 200A, Case: 62PAK, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 400A, Mechanical mounting: screw.