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6A100GHB0G

6A100GHB0G Taiwan Semiconductor Corporation

6A05G%20SERIES_F2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 6A R-6
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Bulk
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Технічний опис 6A100GHB0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 1KV 6A R-6, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: R-6, Axial, Packaging: Bulk.