Технічний опис 6A10GS-YAN Yangzhou Yangjie Electronic
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V, Semiconductor structure: single diode, Case: DO27, Features of semiconductor devices: glass passivated, Mounting: THT, Type of diode: rectifying, Max. forward voltage: 1.1V, Load current: 6A, Max. off-state voltage: 1kV, Max. forward impulse current: 200A, Kind of package: tape.
Інші пропозиції 6A10GS-YAN
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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6A10GS | YANGJIE TECHNOLOGY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Semiconductor structure: single diode Case: DO27 Features of semiconductor devices: glass passivated Mounting: THT Type of diode: rectifying Max. forward voltage: 1.1V Load current: 6A Max. off-state voltage: 1kV Max. forward impulse current: 200A Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. |
| 6A10GS |
|
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Semiconductor structure: single diode
Case: DO27
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Semiconductor structure: single diode
Case: DO27
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 6A
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: tape
товару немає в наявності
В кошику
од. на суму грн.