6N138(TP1,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 1µs, 4µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 2.5KV DARL W/BASE 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 1µs, 4µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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Технічний опис 6N138(TP1,F) Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 8SMD, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Gull Wing, Output Type: Darlington with Base, Mounting Type: Surface Mount, Operating Temperature: 0°C ~ 70°C, Voltage - Forward (Vf) (Typ): 1.65V, Input Type: DC, Current - Output / Channel: 60mA, Voltage - Isolation: 2500Vrms, Current Transfer Ratio (Min): 300% @ 1.6mA, Supplier Device Package: 8-SMD, Voltage - Output (Max): 18V, Turn On / Turn Off Time (Typ): 1µs, 4µs, Part Status: Active, Number of Channels: 1, Current - DC Forward (If) (Max): 20 mA.