7164S25TPGI Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: IC SRAM 64KBIT PARALLEL 28DIP
Packaging: Tray
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
Description: IC SRAM 64KBIT PARALLEL 28DIP
Packaging: Tray
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
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Технічний опис 7164S25TPGI Renesas Electronics Corporation
Description: IC SRAM 64KBIT PARALLEL 28DIP, Packaging: Tray, Package / Case: 28-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Memory Size: 64Kbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 28-PDIP, Write Cycle Time - Word, Page: 25ns, Memory Interface: Parallel, Access Time: 25 ns, Memory Organization: 8K x 8.