8ETX06-1 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262-3
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262-3
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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Технічний опис 8ETX06-1 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262-3, Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-262-3, Current - Average Rectified (Io): 8A, Technology: Standard, Reverse Recovery Time (trr): 24 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.