Результат пошуку "9340430" : 12
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
PBR941,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 360mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz Supplier Device Package: SOT-23 (TO-236AB) |
товар відсутній |
||
PBR941,215 | NXP Semiconductors | Trans RF BJT NPN 10V 0.05A 360mW 3-Pin TO-236AB T/R |
товар відсутній |
||
PBR941,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 360mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz Supplier Device Package: SOT-23 (TO-236AB) |
товар відсутній |
||
PBR951,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 365mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz Supplier Device Package: SOT-23 (TO-236AB) |
товар відсутній |
||
PBR951,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 365mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz Supplier Device Package: SOT-23 (TO-236AB) |
товар відсутній |
||
PBR951,215 | NXP Semiconductors | Trans RF BJT NPN 10V 0.1A 365mW 3-Pin TO-236AB T/R |
товар відсутній |
||
PRF947,115 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Supplier Device Package: SC-70 Part Status: Obsolete |
товар відсутній |
||
PRF947,115 | NXP Semiconductors | Trans RF BJT NPN 10V 0.05A 250mW 3-Pin SC-70 T/R |
товар відсутній |
||
PRF947,115 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Supplier Device Package: SC-70 Part Status: Obsolete |
товар відсутній |
||
PRF957,115 | NXP Semiconductors | Trans RF BJT NPN 10V 0.1A 270mW 3-Pin SC-70 T/R |
товар відсутній |
||
PRF957,115 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 270mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz Supplier Device Package: SC-70 |
товар відсутній |
||
PRF957,115 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 270mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz Supplier Device Package: SC-70 |
товар відсутній |
PBR941,215 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
товар відсутній
PBR941,215 |
Виробник: NXP Semiconductors
Trans RF BJT NPN 10V 0.05A 360mW 3-Pin TO-236AB T/R
Trans RF BJT NPN 10V 0.05A 360mW 3-Pin TO-236AB T/R
товар відсутній
PBR941,215 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
товар відсутній
PBR951,215 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 365mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 365mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
товар відсутній
PBR951,215 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 365mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
Description: RF TRANS NPN 10V 8GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 365mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-23 (TO-236AB)
товар відсутній
PBR951,215 |
Виробник: NXP Semiconductors
Trans RF BJT NPN 10V 0.1A 365mW 3-Pin TO-236AB T/R
Trans RF BJT NPN 10V 0.1A 365mW 3-Pin TO-236AB T/R
товар відсутній
PRF947,115 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
PRF947,115 |
Виробник: NXP Semiconductors
Trans RF BJT NPN 10V 0.05A 250mW 3-Pin SC-70 T/R
Trans RF BJT NPN 10V 0.05A 250mW 3-Pin SC-70 T/R
товар відсутній
PRF947,115 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
PRF957,115 |
Виробник: NXP Semiconductors
Trans RF BJT NPN 10V 0.1A 270mW 3-Pin SC-70 T/R
Trans RF BJT NPN 10V 0.1A 270mW 3-Pin SC-70 T/R
товар відсутній
PRF957,115 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
товар відсутній
PRF957,115 |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
товар відсутній