Інші пропозиції APT12031JFLL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT12031JFLL | Виробник : Microchip Technology |
 Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube |
товар відсутній |
|
|
|
APT12031JFLL | Виробник : Microchip Technology |
Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube |
товар відсутній |
|
 |
APT12031JFLL | Виробник : Microchip Technology |
Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227 Tube |
товар відсутній |
|
| APT12031JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||
 |
APT12031JFLL | Виробник : Microchip Technology |
Description: MOSFET N-CH 1200V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V Power Dissipation (Max): 690AW (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
товар відсутній |
|
 |
APT12031JFLL | Виробник : Microchip Technology |
MOSFET Modules FREDFET MOS7 1200 V 31 Ohm SOT-227 |
товар відсутній |
|
| APT12031JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 120A Power dissipation: 690W Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |