Технічний опис APT8020JFLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W, Case: ISOTOP, Power dissipation: 520W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 132A, Semiconductor structure: single transistor, Drain-source voltage: 800V, Drain current: 33A, On-state resistance: 0.22Ω, кількість в упаковці: 1 шт.
Інші пропозиції APT8020JFLL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT8020JFLL | Виробник : Microchip Technology |
 Trans MOSFET N-CH 800V 33A 4-Pin SOT-227 Tube |
товар відсутній |
|
| APT8020JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.22Ω кількість в упаковці: 1 шт |
товар відсутній |
||
 |
APT8020JFLL | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 33A ISOTOP |
товар відсутній |
|
| APT8020JFLL | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules FG, FREDFET, 800V, 0.20_OHM, SOT-227 |
товар відсутній |
||
| APT8020JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.22Ω |
товар відсутній |