BUK7Y35-55B,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET N-CH 55V 28.43A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.43A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 781 pF @ 25 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис BUK7Y35-55B,115 NXP USA Inc.
Description: MOSFET N-CH 55V 28.43A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.43A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 781 pF @ 25 V.