Результат пошуку "HER304 300V 3A 50ns" : 20
Вид перегляду :
Мінімальне замовлення: 20
Мінімальне замовлення: 8
Мінімальне замовлення: 1250
Мінімальне замовлення: 8
Мінімальне замовлення: 1250
Мінімальне замовлення: 500
Мінімальне замовлення: 60
Мінімальне замовлення: 2500
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
HER304G | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.3V Reverse recovery time: 50ns |
на замовлення 1205 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
HER304G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
HER304G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 1250 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
HER304GH | Taiwan Semiconductor Corporation |
Description: 50NS, 3A, 300V, HIGH EFFICIENT R Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
HER304GH | Taiwan Semiconductor Corporation |
Description: 50NS, 3A, 300V, HIGH EFFICIENT R Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
BAS21J,115 | NEXPERIA |
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A tariffCode: 85411000 Bauform - Diode: SOD-323F Durchlassstoßstrom: 3A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.1V Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 250mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 300V Anzahl der Pins: 2Pin(s) Produktpalette: BAS21 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C |
на замовлення 3322 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
BAS21J,115 | NEXPERIA |
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A tariffCode: 85411000 Bauform - Diode: SOD-323F Durchlassstoßstrom: 3A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.1V Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 250mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 300V Anzahl der Pins: 2Pin(s) Produktpalette: BAS21 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C |
на замовлення 3322 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
MURD330T4G | ONSEMI |
Description: ONSEMI - MURD330T4G - Diode mit kurzer/ultrakurzer Erholzeit, 300 V, 3 A, Einfach, 1.15 V, 50 ns, 75 A tariffCode: 85411000 Bauform - Diode: TO-252 (DPAK) Durchlassstoßstrom: 75A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.15V Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 3A euEccn: NLR Wiederkehrende Spitzensperrspannung: 300V Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (14-Jun-2023) |
на замовлення 8313 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
HER304 | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.3V Reverse recovery time: 50ns |
товар відсутній |
||||||||||||
HER304-AP | Micro Commercial Co |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304-T | Diodes Incorporated |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304-T | Diodes Incorporated |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304-TP | Micro Commercial Co |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304G-AP | Micro Commercial Co |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304G-K | Taiwan Semiconductor Corporation |
Description: 50NS, 3A, 300V, HIGH EFFICIENT R Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304G-TP | Micro Commercial Co |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товар відсутній |
||||||||||||
HER304GA-G | Comchip Technology |
Description: DIODE GEN PURP 300V 3A DO27 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товар відсутній |
||||||||||||
HER304GT-G | Comchip Technology |
Description: DIODE GEN PURP 300V 3A DO27 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товар відсутній |
HER304G |
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
на замовлення 1205 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 20.69 грн |
45+ | 8.51 грн |
100+ | 7.62 грн |
125+ | 6.38 грн |
345+ | 6.04 грн |
HER304G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.06 грн |
10+ | 30.13 грн |
100+ | 20.94 грн |
500+ | 15.34 грн |
HER304G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1250+ | 13.8 грн |
HER304GH |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.06 грн |
10+ | 30.13 грн |
100+ | 20.94 грн |
500+ | 15.34 грн |
HER304GH |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1250+ | 13.8 грн |
2500+ | 11.88 грн |
BAS21J,115 |
Виробник: NEXPERIA
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
на замовлення 3322 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
500+ | 2.87 грн |
1500+ | 2.6 грн |
BAS21J,115 |
Виробник: NEXPERIA
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
на замовлення 3322 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
60+ | 12.42 грн |
82+ | 9.09 грн |
128+ | 5.82 грн |
500+ | 2.87 грн |
1500+ | 2.6 грн |
MURD330T4G |
Виробник: ONSEMI
Description: ONSEMI - MURD330T4G - Diode mit kurzer/ultrakurzer Erholzeit, 300 V, 3 A, Einfach, 1.15 V, 50 ns, 75 A
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Durchlassstoßstrom: 75A
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.15V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 3A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MURD330T4G - Diode mit kurzer/ultrakurzer Erholzeit, 300 V, 3 A, Einfach, 1.15 V, 50 ns, 75 A
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Durchlassstoßstrom: 75A
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.15V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 3A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (14-Jun-2023)
на замовлення 8313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 51.96 грн |
HER304 |
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
товар відсутній
HER304-AP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-T |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-T |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-TP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G B0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-AP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-K |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-TP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304GA-G |
Виробник: Comchip Technology
Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER304GT-G |
Виробник: Comchip Technology
Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній