Результат пошуку "HER304 300V 3A 50ns" : 20

Вид перегляду :
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
HER304G HER304G YANGJIE TECHNOLOGY HER301G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
на замовлення 1205 шт:
термін постачання 21-30 дні (днів)
20+20.69 грн
45+ 8.51 грн
100+ 7.62 грн
125+ 6.38 грн
345+ 6.04 грн
Мінімальне замовлення: 20
HER304G HER304G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
8+37.06 грн
10+ 30.13 грн
100+ 20.94 грн
500+ 15.34 грн
Мінімальне замовлення: 8
HER304G HER304G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
1250+13.8 грн
Мінімальне замовлення: 1250
HER304GH HER304GH Taiwan Semiconductor Corporation Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
8+37.06 грн
10+ 30.13 грн
100+ 20.94 грн
500+ 15.34 грн
Мінімальне замовлення: 8
HER304GH HER304GH Taiwan Semiconductor Corporation Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1250+13.8 грн
2500+ 11.88 грн
Мінімальне замовлення: 1250
BAS21J,115 BAS21J,115 NEXPERIA BAS21J.pdf Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
на замовлення 3322 шт:
термін постачання 21-31 дні (днів)
500+2.87 грн
1500+ 2.6 грн
Мінімальне замовлення: 500
BAS21J,115 BAS21J,115 NEXPERIA BAS21J.pdf Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
на замовлення 3322 шт:
термін постачання 21-31 дні (днів)
60+12.42 грн
82+ 9.09 грн
128+ 5.82 грн
500+ 2.87 грн
1500+ 2.6 грн
Мінімальне замовлення: 60
MURD330T4G ONSEMI MURD330-D.PDF Description: ONSEMI - MURD330T4G - Diode mit kurzer/ultrakurzer Erholzeit, 300 V, 3 A, Einfach, 1.15 V, 50 ns, 75 A
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Durchlassstoßstrom: 75A
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.15V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 3A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (14-Jun-2023)
на замовлення 8313 шт:
термін постачання 21-31 дні (днів)
2500+51.96 грн
Мінімальне замовлення: 2500
HER304 HER304 YANGJIE TECHNOLOGY HER301_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
товар відсутній
HER304-AP HER304-AP Micro Commercial Co HER301_-_HER308.pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-T HER304-T Diodes Incorporated HER301-305.pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-T HER304-T Diodes Incorporated HER301-305.pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-TP HER304-TP Micro Commercial Co HER301_-_HER308.pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G A0G HER304G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G B0G HER304G B0G Taiwan Semiconductor Corporation HER301G%20SERIES_I2105.pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-AP HER304G-AP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-K HER304G-K Taiwan Semiconductor Corporation Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-TP HER304G-TP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304GA-G Comchip Technology HER301G-G%20Thru.%20HER308G-G%20RevA.pdf Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER304GT-G Comchip Technology HER301G-G%20Thru.%20HER308G-G%20RevA.pdf Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER304G HER301G_SER.pdf
HER304G
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
на замовлення 1205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
20+20.69 грн
45+ 8.51 грн
100+ 7.62 грн
125+ 6.38 грн
345+ 6.04 грн
Мінімальне замовлення: 20
HER304G
HER304G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+37.06 грн
10+ 30.13 грн
100+ 20.94 грн
500+ 15.34 грн
Мінімальне замовлення: 8
HER304G
HER304G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1250+13.8 грн
Мінімальне замовлення: 1250
HER304GH
HER304GH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+37.06 грн
10+ 30.13 грн
100+ 20.94 грн
500+ 15.34 грн
Мінімальне замовлення: 8
HER304GH
HER304GH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1250+13.8 грн
2500+ 11.88 грн
Мінімальне замовлення: 1250
BAS21J,115 BAS21J.pdf
BAS21J,115
Виробник: NEXPERIA
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
на замовлення 3322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+2.87 грн
1500+ 2.6 грн
Мінімальне замовлення: 500
BAS21J,115 BAS21J.pdf
BAS21J,115
Виробник: NEXPERIA
Description: NEXPERIA - BAS21J,115 - Kleinsignaldiode, Einfach, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
tariffCode: 85411000
Bauform - Diode: SOD-323F
Durchlassstoßstrom: 3A
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 250mA
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 2Pin(s)
Produktpalette: BAS21
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
на замовлення 3322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
60+12.42 грн
82+ 9.09 грн
128+ 5.82 грн
500+ 2.87 грн
1500+ 2.6 грн
Мінімальне замовлення: 60
MURD330T4G MURD330-D.PDF
Виробник: ONSEMI
Description: ONSEMI - MURD330T4G - Diode mit kurzer/ultrakurzer Erholzeit, 300 V, 3 A, Einfach, 1.15 V, 50 ns, 75 A
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Durchlassstoßstrom: 75A
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.15V
Sperrverzögerungszeit: 50ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 3A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 300V
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (14-Jun-2023)
на замовлення 8313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+51.96 грн
Мінімальне замовлення: 2500
HER304 HER301_SER.pdf
HER304
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 50ns
товар відсутній
HER304-AP HER301_-_HER308.pdf
HER304-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-T HER301-305.pdf
HER304-T
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-T HER301-305.pdf
HER304-T
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304-TP HER301_-_HER308.pdf
HER304-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G A0G
HER304G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G B0G HER301G%20SERIES_I2105.pdf
HER304G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-AP HER301G~HER308G(DO-201AD).pdf
HER304G-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-K
HER304G-K
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 3A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304G-TP HER301G~HER308G(DO-201AD).pdf
HER304G-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
HER304GA-G HER301G-G%20Thru.%20HER308G-G%20RevA.pdf
Виробник: Comchip Technology
Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER304GT-G HER301G-G%20Thru.%20HER308G-G%20RevA.pdf
Виробник: Comchip Technology
Description: DIODE GEN PURP 300V 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній