IRFF9222 Harris Corporation

Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-205AF (TO-39), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.