SSM6P35FE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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Технічний опис SSM6P35FE(TE85L,F) Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V, Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.
Інші пропозиції SSM6P35FE(TE85L,F)
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SSM6P35FE(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
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