A2T26H165-24SR3128 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET
Packaging: Bulk
Package / Case: NI-780S-4L2L
Current Rating (Amps): 700mA
Mounting Type: Surface Mount
Frequency: 2.5GHz ~ 2.69GHz
Configuration: 2 N-Channel
Power - Output: 51dBm
Gain: 14.7dB
Technology: LDMOS (Dual)
Supplier Device Package: NI-780S-4L2L
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 400 mA
Description: RF MOSFET
Packaging: Bulk
Package / Case: NI-780S-4L2L
Current Rating (Amps): 700mA
Mounting Type: Surface Mount
Frequency: 2.5GHz ~ 2.69GHz
Configuration: 2 N-Channel
Power - Output: 51dBm
Gain: 14.7dB
Technology: LDMOS (Dual)
Supplier Device Package: NI-780S-4L2L
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 400 mA
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 8400.85 грн |
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Технічний опис A2T26H165-24SR3128 NXP USA Inc.
Description: RF MOSFET, Packaging: Bulk, Package / Case: NI-780S-4L2L, Current Rating (Amps): 700mA, Mounting Type: Surface Mount, Frequency: 2.5GHz ~ 2.69GHz, Configuration: 2 N-Channel, Power - Output: 51dBm, Gain: 14.7dB, Technology: LDMOS (Dual), Supplier Device Package: NI-780S-4L2L, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 400 mA.