A315G Harris Corporation
Виробник: Harris Corporation
Description: DIODE GEN PURP 150V 3A AL-4
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: AL-4
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Відгуки про товар
Написати відгук
Технічний опис A315G Harris Corporation
Description: DIODE GEN PURP 150V 3A AL-4, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204, Axial, Packaging: Bulk, Current - Reverse Leakage @ Vr: 3 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: AL-4, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 100pF @ 4V, 1MHz.