AB2M040120Z BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 128A; 348W, Pulsed drain current: 128A, Power dissipation: 348W, Gate charge: 90nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 51A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: TO247-4, On-state resistance: 40mΩ, Mounting: THT.