AC3M0032120D APSEMI
Виробник: APSEMIDescription: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 683.60 грн |
| 11+ | 614.18 грн |
| 51+ | 548.38 грн |
| 101+ | 370.53 грн |
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Технічний опис AC3M0032120D APSEMI
Description: SIC MOSFET N-CH 1200V 64A TO247-, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A, Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 11.5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V.