
ADE4D20120D Analog Power Inc.

Description: DIODE SIL CARB 1200V 33A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
1+ | 1890.26 грн |
10+ | 1617.20 грн |
100+ | 1414.46 грн |
500+ | 1132.73 грн |
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Технічний опис ADE4D20120D Analog Power Inc.
Description: DIODE SIL CARB 1200V 33A TO2473, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 12pF @ 0V, 100kHz, Current - Average Rectified (Io): 33A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V.