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ADTC144ELP4WQ-7 Diodes Incorporated

ADTC144ELP4WQ.pdf
Виробник: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.39 грн
6000+2.93 грн
9000+2.76 грн
15000+2.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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Технічний опис ADTC144ELP4WQ-7 Diodes Incorporated

Description: PREBIAS TRANSISTOR U-DFN1003-3 T, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Supplier Device Package: U-DFN1006-3/SWP (Type UX), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 255 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.