Продукція > NXP USA INC. > AFT21H350W04GSR6

AFT21H350W04GSR6 NXP USA Inc.

Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230
Current - Test: 750 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: NI-1230S-4 GULL
Technology: LDMOS
Gain: 16.4dB
Power - Output: 63W
Frequency: 2.11GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S-4 GW
Packaging: Tape & Reel (TR)

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Технічний опис AFT21H350W04GSR6 NXP USA Inc.

Description: RF MOSFET LDMOS 28V NI1230, Current - Test: 750 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Supplier Device Package: NI-1230S-4 GULL, Technology: LDMOS, Gain: 16.4dB, Power - Output: 63W, Frequency: 2.11GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230S-4 GW, Packaging: Tape & Reel (TR).