AIHD10N60RATMA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 24ns
Turn-off time: 331ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 24ns
Turn-off time: 331ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
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Технічний опис AIHD10N60RATMA1 INFINEON TECHNOLOGIES
Category: SMD IGBT transistors, Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK, Type of transistor: IGBT, Technology: TRENCHSTOP™ RC, Collector-emitter voltage: 600V, Collector current: 10A, Power dissipation: 150W, Case: DPAK, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Mounting: SMD, Gate charge: 64nC, Kind of package: reel; tape, Turn-on time: 24ns, Turn-off time: 331ns, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), кількість в упаковці: 2500 шт.
Інші пропозиції AIHD10N60RATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
AIHD10N60RATMA1 | Виробник : Infineon Technologies | Description: IC DISCRETE 600V TO252-3 |
товар відсутній |
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AIHD10N60RATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Turn-on time: 24ns Turn-off time: 331ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товар відсутній |