Технічний опис AIHD10N60RATMA1 Infineon Technologies
Category: SMD IGBT transistors, Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK, Type of transistor: IGBT, Technology: TRENCHSTOP™ RC, Power dissipation: 150W, Case: DPAK, Mounting: SMD, Kind of package: reel; tape, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Collector-emitter voltage: 600V, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), Gate charge: 64nC, Turn-on time: 24ns, Turn-off time: 331ns, Collector current: 10A.
Інші пропозиції AIHD10N60RATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AIHD10N60RATMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 64nC Turn-on time: 24ns Turn-off time: 331ns Collector current: 10A |
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