AIMZH120R030M1TXKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1360.68 грн |
| 30+ | 818.92 грн |
| 120+ | 727.78 грн |
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Технічний опис AIMZH120R030M1TXKSA1 Infineon Technologies
Description: SIC_DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 8.6mA, Supplier Device Package: PG-TO247-4-11, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції AIMZH120R030M1TXKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AIMZH120R030M1TXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 49A; Idm: 176A; 163W Application: automotive industry Drain current: 49A Power dissipation: 163W Pulsed drain current: 176A Case: TO247-4 Drain-source voltage: 1.2kV Mounting: THT Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Gate-source voltage: -5...23V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Technology: CoolSiC™; SiC On-state resistance: 60mΩ |
товару немає в наявності |