AKS1397 AKYGA SEMI


bss84k.pdf
Виробник: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.2A
Power dissipation: 285mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -0.8A
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Технічний опис AKS1397 AKYGA SEMI

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -0.2A, Power dissipation: 285mW, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 5.7Ω, Mounting: SMD, Gate charge: 1.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: -0.8A.