AKS1397 AKYGA SEMI
Виробник: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -200mA
Power dissipation: 285mW
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Pulsed drain current: -0.8A
Gate charge: 1.8nC
Polarisation: unipolar
Kind of package: reel; tape
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Технічний опис AKS1397 AKYGA SEMI
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW, Type of transistor: P-MOSFET, Drain-source voltage: -60V, Drain current: -200mA, Power dissipation: 285mW, Gate-source voltage: ±20V, On-state resistance: 5.7Ω, Mounting: SMD, Kind of channel: enhancement, Case: SOT23, Pulsed drain current: -0.8A, Gate charge: 1.8nC, Polarisation: unipolar, Kind of package: reel; tape.


