AL1J-CT Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: DIODE AVALANCHE 600V 1A DO213AA
Packaging: Strip
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA, MINI-MELF
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 25.85 грн |
| 50+ | 21.46 грн |
| 100+ | 18.49 грн |
| 250+ | 12.38 грн |
| 750+ | 6.88 грн |
| 1000+ | 6.35 грн |
| 1500+ | 5.61 грн |
| 2500+ | 5.37 грн |
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Технічний опис AL1J-CT Diotec Semiconductor
Description: DIODE AVALANCHE 600V 1A DO213AA, Packaging: Strip, Package / Case: DO-213AA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Avalanche, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AA, MINI-MELF, Operating Temperature - Junction: -50°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 3 µA @ 600 V.