ALD212908SAL Advanced Linear Devices
| Кількість | Ціна |
|---|---|
| 1+ | 617.17 грн |
| 10+ | 487.16 грн |
| 100+ | 342.34 грн |
| 500+ | 304.45 грн |
| 1000+ | 269.32 грн |
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Технічний опис ALD212908SAL Advanced Linear Devices
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 20mV @ 10µA, Supplier Device Package: 8-SOIC.
Інші пропозиції ALD212908SAL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
ALD212908SAL | Advanced Linear Devices Inc. |
 Description: MOSFET 2N-CH 10.6V 0.08A 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| ALD212908SAL |
|
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-SOIC
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.