AMC2M0080120D Analog Power Inc.
Виробник: Analog Power Inc.Description: SICFET N-CH 1200V 36A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 50 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 6.5 V
на замовлення 1199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2214.74 грн |
| 30+ | 1768.06 грн |
| 120+ | 1657.56 грн |
| 510+ | 1324.67 грн |
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Технічний опис AMC2M0080120D Analog Power Inc.
Description: SICFET N-CH 1200V 36A TO247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 155°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 1.2 kV, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 50 V, Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 6.5 V.