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AMJD31C-HF Comchip Technology

AQW-JTR39%20AMJD31C-HF%20RevA.pdf Виробник: Comchip Technology
Description: AUTOMOTIVE TRANS SILICON EPITAXI
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252-2
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис AMJD31C-HF Comchip Technology

Description: AUTOMOTIVE TRANS SILICON EPITAXI, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: TO-252-2, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.25 W, Grade: Automotive, Qualification: AEC-Q101.

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AMJD31C-HF AMJD31C-HF Виробник : Comchip Technology AQW_JTR39_AMJD31C_HF_RevA-3032497.pdf Bipolar Transistors - BJT AUTOMOTIVE TRANS SILICON EPITAXIAL PLANAR NPN 100V 3A
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