Технічний опис AOB42S60 Alpha & Omega Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263, Kind of package: reel; tape, Case: TO263, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Polarisation: unipolar, Gate charge: 40nC, On-state resistance: 109mΩ, Power dissipation: 417W, Gate-source voltage: ±30V, Drain-source voltage: 600V, Drain current: 37A, Pulsed drain current: 166A, кількість в упаковці: 800 шт.
Інші пропозиції AOB42S60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOB42S60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263 Kind of package: reel; tape Case: TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 40nC On-state resistance: 109mΩ Power dissipation: 417W Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 37A Pulsed drain current: 166A кількість в упаковці: 800 шт |
товару немає в наявності |
||
| AOB42S60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263 Kind of package: reel; tape Case: TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 40nC On-state resistance: 109mΩ Power dissipation: 417W Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 37A Pulsed drain current: 166A |
товару немає в наявності |