Технічний опис AOB42S60 Alpha & Omega Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263, Drain-source voltage: 600V, Drain current: 37A, On-state resistance: 109mΩ, Type of transistor: N-MOSFET, Power dissipation: 417W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 40nC, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 166A, Mounting: SMD, Case: TO263, кількість в упаковці: 800 шт.
Інші пропозиції AOB42S60
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AOB42S60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263 Drain-source voltage: 600V Drain current: 37A On-state resistance: 109mΩ Type of transistor: N-MOSFET Power dissipation: 417W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 166A Mounting: SMD Case: TO263 кількість в упаковці: 800 шт |
товару немає в наявності |
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AOB42S60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263 Drain-source voltage: 600V Drain current: 37A On-state resistance: 109mΩ Type of transistor: N-MOSFET Power dissipation: 417W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 166A Mounting: SMD Case: TO263 |
товару немає в наявності |