AOC2401 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3A 4ALPHADFN
Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 4-AlphaDFN (1.57x1.57)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис AOC2401 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3A 4ALPHADFN, Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 4-AlphaDFN (1.57x1.57), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 550mW (Ta), Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Tape & Reel (TR).