AOC2804B Alpha & Omega Semiconductor


7aoc2804b.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 6A T/R
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Технічний опис AOC2804B Alpha & Omega Semiconductor

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Power dissipation: 1.3W, Case: DFN4, Gate-source voltage: ±12V, On-state resistance: 34mΩ, Mounting: SMD, Gate charge: 9.5nC, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.

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AOC2804B Виробник : ALPHA & OMEGA SEMICONDUCTOR AOC2804B.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
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AOC2804B AOC2804B Виробник : Alpha & Omega Semiconductor Inc. AOC2804B.pdf Description: MOSFET 2 N-CHANNEL 4DFN
товар відсутній
AOC2804B Виробник : ALPHA & OMEGA SEMICONDUCTOR AOC2804B.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
товар відсутній