Технічний опис AOC2804B Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Power dissipation: 1.3W, Case: DFN4, Gate-source voltage: ±12V, On-state resistance: 34mΩ, Mounting: SMD, Gate charge: 9.5nC, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції AOC2804B
Фото | Назва | Виробник | Інформація |
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AOC2804B | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.3W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 34mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AOC2804B | Виробник : Alpha & Omega Semiconductor Inc. | Description: MOSFET 2 N-CHANNEL 4DFN |
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AOC2804B | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.3W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 34mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
товар відсутній |