AOC3860A ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
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Технічний опис AOC3860A ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 12V, Power dissipation: 2.5W, Case: DFN6, Gate-source voltage: ±8V, On-state resistance: 3.5mΩ, Mounting: SMD, Gate charge: 44nC, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції AOC3860A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AOC3860A | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 6DFN |
товар відсутній |
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| AOC3860A | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.5W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
товар відсутній |