AOC3868 ALPHA & OMEGA SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Semiconductor structure: common drain, Case: DFN6, Kind of channel: enhancement, Version: ESD, Type of transistor: N-MOSFET x2, Mounting: SMD, Polarisation: unipolar, Gate charge: 35nC, On-state resistance: 5mΩ, Power dissipation: 2.5W, Gate-source voltage: ±8V, Drain-source voltage: 12V.