Технічний опис AOC3868 Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Semiconductor structure: common drain, Drain-source voltage: 12V, On-state resistance: 5mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 2.5W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 35nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Mounting: SMD, Case: DFN6, кількість в упаковці: 1 шт.
Інші пропозиції AOC3868
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AOC3868 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN6 кількість в упаковці: 1 шт |
товар відсутній |
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| AOC3868 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN6 |
товар відсутній |