Технічний опис AOC3868 Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Semiconductor structure: common drain, Case: DFN6, Kind of channel: enhancement, Version: ESD, Type of transistor: N-MOSFET x2, Mounting: SMD, Polarisation: unipolar, Gate charge: 35nC, On-state resistance: 5mΩ, Power dissipation: 2.5W, Gate-source voltage: ±8V, Drain-source voltage: 12V, кількість в упаковці: 5000 шт.
Інші пропозиції AOC3868
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOC3868 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Case: DFN6 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 35nC On-state resistance: 5mΩ Power dissipation: 2.5W Gate-source voltage: ±8V Drain-source voltage: 12V кількість в упаковці: 5000 шт |
товару немає в наявності |
||
| AOC3868 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Case: DFN6 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 35nC On-state resistance: 5mΩ Power dissipation: 2.5W Gate-source voltage: ±8V Drain-source voltage: 12V |
товару немає в наявності |