AOC3868 ALPHA & OMEGA SEMICONDUCTOR


AOC3868.pdf
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 35nC
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 5mΩ
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
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Технічний опис AOC3868 ALPHA & OMEGA SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Mounting: SMD, Power dissipation: 2.5W, Gate charge: 35nC, Polarisation: unipolar, Version: ESD, Kind of channel: enhancement, Drain-source voltage: 12V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±8V, Semiconductor structure: common drain, Case: DFN6, On-state resistance: 5mΩ.