AOC3878 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 12V 35A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.55x1.77)
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Технічний опис AOC3878 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 35A 10DFN, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 10-AlphaDFN (3.55x1.77).
Інші пропозиції AOC3878
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOC3878 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain Polarisation: unipolar Semiconductor structure: common drain Case: DFN10 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Mounting: SMD Gate charge: 60nC On-state resistance: 2mΩ Power dissipation: 3.1W Gate-source voltage: ±8V Drain-source voltage: 12V |
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