AOC3878 ALPHA & OMEGA SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain, On-state resistance: 2mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 3.1W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 60nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Mounting: SMD, Case: DFN10, Semiconductor structure: common drain, Drain-source voltage: 12V, кількість в упаковці: 1 шт.