Технічний опис AOCA24108E Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 12V, Power dissipation: 2.2W, Case: DFN6, Gate-source voltage: ±8V, On-state resistance: 7.5mΩ, Mounting: SMD, Gate charge: 15nC, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції AOCA24108E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AOCA24108E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.2W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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| AOCA24108E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.2W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
товар відсутній |