AOCA33102E Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 50A 14DFN
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 14-AlphaDFN (3x2.74)
Description: MOSFET 2N-CH 12V 50A 14DFN
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 14-AlphaDFN (3x2.74)
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Технічний опис AOCA33102E Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 50A 14DFN, Packaging: Tape & Reel (TR), Package / Case: 14-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.2W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 14-AlphaDFN (3x2.74).