Технічний опис AOCA36116C Alpha & Omega Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 24V; 3.1W; DFN; common drain, Power dissipation: 3.1W, Polarisation: unipolar, Version: ESD, Gate charge: 35nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Mounting: SMD, Case: DFN, Semiconductor structure: common drain, Drain-source voltage: 24V, On-state resistance: 5mΩ, Type of transistor: N-MOSFET x2, кількість в упаковці: 5000 шт.
Інші пропозиції AOCA36116C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AOCA36116C | Виробник : Alpha & Omega Semiconductor |
 Common Drain Dual N Channel MOSFET |
товару немає в наявності |
||
| AOCA36116C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 3.1W; DFN; common drain Power dissipation: 3.1W Polarisation: unipolar Version: ESD Gate charge: 35nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: DFN Semiconductor structure: common drain Drain-source voltage: 24V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 кількість в упаковці: 5000 шт |
товару немає в наявності |
||
| AOCA36116C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 3.1W; DFN; common drain Power dissipation: 3.1W Polarisation: unipolar Version: ESD Gate charge: 35nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: DFN Semiconductor structure: common drain Drain-source voltage: 24V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 |
товару немає в наявності |