AOD256_001 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 3A/19A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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Технічний опис AOD256_001 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 3A/19A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.