AOE66410 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 147W
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис AOE66410 Alpha & Omega Semiconductor Inc.
Description: N, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN-EP (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 147W, Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).