AOI21357 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 23A/70A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.89 грн |
| 70+ | 32.43 грн |
| 140+ | 28.83 грн |
| 560+ | 21.80 грн |
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Технічний опис AOI21357 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 23A/70A TO251A, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251A, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Інші пропозиції AOI21357
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| AOI21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Power dissipation: 31W Case: TO251A Gate-source voltage: ±25V On-state resistance: 11.5mΩ Gate charge: 70nC Kind of channel: enhancement Pulsed drain current: -180A Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. |
| AOI21357 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Gate charge: 70nC
Kind of channel: enhancement
Pulsed drain current: -180A
Version: ESD
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Gate charge: 70nC
Kind of channel: enhancement
Pulsed drain current: -180A
Version: ESD
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.