AOI2210 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 200V 3A/18A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2065 pF @ 100 V
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Технічний опис AOI2210 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 200V 3A/18A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2065 pF @ 100 V.