AOI2610 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 10A/46A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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Технічний опис AOI2610 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 10A/46A TO251A, Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251A, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.