Технічний опис AOI2610E Alpha & Omega Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 36.5A, Power dissipation: 23.5W, Case: TO251A, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: THT, Gate charge: 7nC, Kind of channel: enhancement, Version: ESD.
Інші пропозиції AOI2610E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AOI2610E | Виробник : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 60V 46A TO251APackaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Supplier Device Package: TO-251A |
товару немає в наявності |
|
 |
AOI2610E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhancement Version: ESD |
товару немає в наявності |